AS4C16M16SB-7TCN

Alliance Memory
913-AS4C16M16SB-7TCN
AS4C16M16SB-7TCN

Mfr.:

Description:
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray

ECAD Model:
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In Stock: 1,497

Stock:
1,497 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$6.21 $6.21
$5.78 $57.80
$5.61 $140.25
$5.03 $251.50
$4.91 $530.28
$4.81 $1,038.96

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
$4.56
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
16 bit
143 MHz
TSOP-II-54
16 M x 16
5.4 ns
3 V
3.6 V
0 C
+ 70 C
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320028
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.