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RoHS

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BC846B-Q

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See Product Specifications

Mouser No:

637-BC846B-Q

Mfr. No:

BC846B-Q

Mfr.:

Diotec Semiconductor

Description:

Bipolar Transistors - BJT BJT, SOT-23, 65V, 100mA, NPN, 0.25W, 150C

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BC846B-Q Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diotec Semiconductor BC846B-Q

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	Bipolar Transistors - BJT
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	100 mA
Collector- Emitter Voltage VCEO Max:	65 V
Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	200 mV
Pd - Power Dissipation:	250 mW
Gain Bandwidth Product fT:	300 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Brand:	Diotec Semiconductor
Continuous Collector Current:	100 mA
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Current Gain hFE Max:	800 V
Product Type:	BJTs - Bipolar Transistors
Subcategory:	Transistors

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Datasheet

BC846B-Q Datasheet (PDF)

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CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210075
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

BC846B-Q SMD General-Purpose NPN Transistor

Diotec Semiconductor BC846B-Q SMD General-Purpose NPN Transistor features three current gain groups in a SOT-23 package and complies with RoHS and REACH. This transistor operates at 65V collector-emitter voltage, 80V collector-base voltage, 6V emitter-base voltage, and 200mA peak collector current. The BC846B-Q NPN transistor utilizes bond wires for commercial grades and AU bond wires for all other grades. The commercial-grade transistor features 200mW of power dissipation with <625K/W thermal resistance junction to ambient. The industrial-grade transistor features 250mW of power dissipation with <420K/W thermal resistance junction to ambient. The BC846B-Q NPN transistor is housed in a UL 94V-0 case material and available in a small SOT-363 Surface-Mount Device (SMD) package. This NPN transistor is ideal for signal processing, switching, amplification, and commercial and industrial-grade use.