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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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GS816018DGT-200

Name: GSI Technology GS816018DGT-200
Brand: GSI Technology
SKU: 464-GS816018DGT-200
Price: 23.13 USD
Availability: OutOfStock

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Mouser No:

464-GS816018DGT-200

Mfr. No:

GS816018DGT-200

Mfr.:

GSI Technology

Description:

SRAM 2.5 or 3.3V 1M x 18 18M

Datasheet:

GS816018DGT-200 Datasheet (PDF)

ECAD Model:

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Learn more about GSI Technology GS816018DGT-200

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$23.13	$23.13
	$21.43	$214.30
	$20.76	$519.00
	$18.54	$667.44
	$18.11	$1,955.88
	$17.51	$4,412.52
	$16.80	$8,467.20
1,008	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	GSI Technology
Product Category:	SRAM
RoHS:
Memory Size:	18 Mbit
Organisation:	1 M x 18
Access Time:	6.5 ns
Maximum Clock Frequency:	200 MHz
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.3 V
Supply Current - Max:	195 mA
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	TQFP-100
Packaging:	Tray
Brand:	GSI Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Memory Type:	SDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	GS816018DGT
Factory Pack Quantity:	36
Subcategory:	Memory & Data Storage
Tradename:	SyncBurst
Type:	Pipeline/Flow Through

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Datasheet

GS816018DGT-200 Datasheet (PDF)

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CNHTS:: 8542319090
CAHTS:: 8542320041
USHTS:: 8542320041
JPHTS:: 854232029
KRHTS:: 8542321020
TARIC:: 8542324500
MXHTS:: 8542320201
ECCN:: 3A991.b.2.b

SyncBurst SRAMs

GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. GSI Technology SyncBurst SRAMs are used in military, networking, industrial, automotive, and medical imaging applications where a mid-range performance point is required.