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RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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IS29GL032-70TLET

Name: ISSI IS29GL032-70TLET
Brand: ISSI
SKU: 870-IS29GL032-70TLET
Price: 3.81 USD
Availability: InStock

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Mouser No:

870-IS29GL032-70TLET

Mfr. No:

IS29GL032-70TLET

Mfr.:

ISSI

Description:

NOR Flash 32Mb,48pin TSOP,3V, RoHS, Highest Sector Protected, Uniform Sector

Datasheet:

IS29GL032-70TLET Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS29GL032-70TLET

In Stock: 384

Stock:: 384 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1 Maximum: 200

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.81	$3.81
	$3.57	$35.70
	$3.46	$86.50
	$3.21	$308.16

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TSOP-48
Memory Size:	32 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	25 mA
Interface Type:	Parallel
Organisation:	2 M x 16
Data Bus Width:	16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	70 ns
Factory Pack Quantity:	96
Subcategory:	Memory & Data Storage

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Datasheet

IS29GL032-70TLET Datasheet (PDF)

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CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

IS29GL032 Parallel Flash Memory Devices

ISSI IS29GL032 Parallel Flash Memory Devices feature a 256-word maximum program buffer and offer blank-check operation to verify an erased sector. These memory devices operate at a 2.7V to 3.6V V_CC input voltage range and provide program suspend, erase suspend, and resume capability. The IS29GL032 memory devices provide standby mode for low-power consumption. ISSI IS29GL032 Parallel Flash Memory Devices are used in embedded applications that require higher density, better performance, and low power consumption.