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IS43R16160D-6TLI

Name: ISSI IS43R16160D-6TLI
Brand: ISSI
SKU: 870-IS43R16160D-6TLI
Price: 7 USD
Availability: InStock

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Mouser No:

870-IS43R16160D-6TLI

Mfr. No:

IS43R16160D-6TLI

Mfr.:

ISSI

Description:

DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM

Datasheet:

IS43R16160D-6TLI Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS43R16160D-6TLI

In Stock: 349

Stock:: 349 Can Dispatch Immediately

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.00	$7.00
	$6.51	$65.10
	$6.31	$157.75

Possible Replacement

Mfr.:

ISSI

Mfr. No:

IS43R16160F-6TLI

Description:

DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR
Memory Size:	256 Mbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	166 MHz
Package/Case:	TSOP-II-66
Organisation:	16 M x 16
Access Time:	6 ns
Supply Voltage - Min:	2.3 V
Supply Voltage - Max:	2.7 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	IS43R16160D
Packaging:	Tray
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	108
Subcategory:	Memory & Data Storage
Supply Current - Max:	280 mA
Unit Weight:	2.188 g

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Datasheet

IS43R16160D-6TLI Datasheet (PDF)

Models

IS43R16160D-6TLI Symbol & Footprint by SnapMagic

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CNHTS:: 8542319090
CAHTS:: 8542320020
USHTS:: 8542320024
JPHTS:: 854232021
KRHTS:: 8542321010
MXHTS:: 8542320299
ECCN:: EAR99

IS43R32800D 8Mx32 256-Mbit DDR SDRAM

ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64MB to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages.

DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.