IS62WV12816BLL-55BLI-TR

ISSI
870WV12816BLL55BLIT
IS62WV12816BLL-55BLI-TR

Mfr.:

Description:
SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,55ns,2.5v-3.6v,48 Ball mBGA (6x8 mm), RoHS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
$2.11 $5,275.00

Alternative Packaging

Mfr. Part No.:
Packaging:
Tray
Availability:
In Stock
Price:
$2.89
Min:
1

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
2 Mbit
128 k x 16
55 ns
Parallel
3.6 V
2.5 V
3 mA
- 40 C
+ 85 C
SMD/SMT
TSOP-44
Reel
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Data Rate: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS62WV12816BLL
Factory Pack Quantity: 2500
Subcategory: Memory & Data Storage
Tradename: PowerSaver
Type: Asynchronous
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Attributes selected: 0

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
8542320194
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.