IS66WV51216EBLL-70TLI

ISSI
870-6651216EBLL70TLI
IS66WV51216EBLL-70TLI

Mfr.:

Description:
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS

Datasheet:
ECAD Model:
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More Information
Learn more about ISSI IS66WV51216EBLL-70TLI

In Stock: 491

Stock:
491 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 136
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.71 $3.71
$3.46 $34.60
$3.37 $84.25
$3.29 $164.50
$3.18 $318.00

Alternative Packaging

Mfr. Part No.:
IS66WV51216EBLL-70TLI-TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$3.40
Min:
1

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
8 Mbit
512 k x 16
70 ns
Parallel
3.6 V
2.5 V
28 mA
- 40 C
+ 85 C
SMD/SMT
TSOP-44
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WV51216EBLL
Factory Pack Quantity: 135
Subcategory: Memory & Data Storage
Type: Asynchronous
Unit Weight: 470 mg
Products found:
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Attributes selected: 0

Datasheet

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CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
JPHTS:
854232021
KRHTS:
8542321010
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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