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RoHS

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LF2184NTR

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See Product Specifications

Mouser No:

747-LF2184NTR

Mfr. No:

LF2184NTR

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers Half-Bridge DRVR 1.4A SOIC(N)-8

Datasheet:

LF2184NTR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about IXYS Integrated Circuits LF2184NTR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	Half-Bridge Drivers
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	40 ns
Fall Time:	20 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	IXYS Integrated Circuits
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Logic Type:	CMOS, TTL
Maximum Turn-Off Delay Time:	400 ns
Maximum Turn-On Delay Time:	900 ns
Moisture Sensitive:	Yes
Operating Supply Current:	1.6 mA
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	90 ns
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LF2184NTR Datasheet (PDF)

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USHTS:: 8542390090
TARIC:: 8542399000
ECCN:: EAR99

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.