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IXBK64N250

Name: IXYS IXBK64N250
Brand: IXYS
SKU: 747-IXBK64N250
Price: 86.88 USD
Availability: OutOfStock

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Mouser No:

747-IXBK64N250

Mfr. No:

IXBK64N250

Mfr.:

IXYS

Description:

IGBTs BIMOSFET 2500V 75A

Datasheet:

IXBK64N250 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about IXYS IXBK64N250

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 80 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 300 Multiples: 25

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$86.88	$26,064.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-264-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	2.5 kV
Collector-Emitter Saturation Voltage:	3 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	156 A
Pd - Power Dissipation:	753 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	IGBT Transistors
Factory Pack Quantity:	25
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	6.400 g

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Datasheet

IXBK64N250 Datasheet (PDF)

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.