IXFN320N17T2

IXYS
747-IXFN320N17T2
IXFN320N17T2

Mfr.:

Description:
MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
28 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 10
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$39.81 $11,943.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
170 V
260 A
5.2 mOhms
- 20 V, + 20 V
5 V
- 55 C
+ 175 C
1.07 kW
IXFN320N17
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 230 ns
Product Type: MOSFET Modules
Rise Time: 170 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: GigaMOS Trench T2 HiperFet
Typical Turn-Off Delay Time: 115 ns
Typical Turn-On Delay Time: 46 ns
Unit Weight: 30 g
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

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