IXFN62N80Q3

IXYS
747-IXFN62N80Q3
IXFN62N80Q3

Mfr.:

Description:
MOSFET Modules Q3Class HiPerFET Pwr MOSFET 800V/49A

Datasheet:
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In Stock: 202

Stock:
202 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 202 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$56.10 $56.10
$50.16 $501.60
$50.12 $5,012.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
800 V
49 A
140 mOhms
- 30 V, + 30 V
- 55 C
+ 150 C
960 W
IXFN62N80
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Product Type: MOSFET Modules
Rise Time: 300 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: HiperFET
Unit Weight: 30 g
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Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

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