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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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IXGH30N120C3H1

Name: IXYS IXGH30N120C3H1
Brand: IXYS
SKU: 747-IXGH30N120C3H1
Price: 7.53 USD
Availability: OutOfStock

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Mouser No:

747-IXGH30N120C3H1

Mfr. No:

IXGH30N120C3H1

Mfr.:

IXYS

Description:

IGBTs High Frequency Range 40khz C-IGBT w/Diode

Datasheet:

IXGH30N120C3H1 Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 44 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 300 Multiples: 30

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.53	$2,259.00
	$7.48	$3,814.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	3.6 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	48 A
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXGH30N120
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6 g

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Datasheet

IXGH30N120C3H1 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

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