IXTK600N04T2

IXYS
747-IXTK600N04T2
IXTK600N04T2

Mfr.:

Description:
MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET

Datasheet:
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Learn more about IXYS IXTK600N04T2

In Stock: 186

Stock:
186 Can Dispatch Immediately
Factory Lead Time:
25 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$24.10 $24.10
$19.71 $197.10
$17.57 $1,757.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
40 V
600 A
1.5 mOhms
- 20 V, 20 V
1.5 V
590 nC
- 55 C
+ 175 C
1.25 kW
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 250 ns
Forward Transconductance - Min: 90 S
Product Type: MOSFETs
Rise Time: 20 ns
Series: IXTK600N04
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 40 ns
Unit Weight: 10 g
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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