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6ED003L06-F2

Name: Infineon 6ED003L06-F2
Brand: Infineon Technologies
SKU: 726-6ED003L06-F2
Price: 3.22 USD
Availability: Discontinued

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Mouser No:

726-6ED003L06-F2

Mfr. No:

6ED003L06-F2

Mfr.:

Infineon Technologies

Description:

Gate Drivers 600V 3-Phase,0.375A OCP, Enable, & FAULT

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

6ED003L06-F2 Datasheet (PDF)

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Learn more about Infineon Technologies 6ED003L06-F2

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Stock:: 0

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.22	$3.22
	$2.11	$21.10
	$1.96	$49.00
	$1.70	$170.00
	$1.60	$400.00
	$1.40	$700.00
Full Reel (Order in multiples of 1000)
	$1.16	$1,160.00
	$1.09	$2,180.00
	$1.07	$5,350.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

6ED003L06F2XUMA1

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

$2.34

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	DSO-28
Number of Drivers:	6 Driver
Number of Outputs:	6 Output
Output Current:	165 mA
Supply Voltage - Min:	13 V
Supply Voltage - Max:	17.5 V
Configuration:	Inverting
Rise Time:	60 ns
Fall Time:	26 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	Infineon SOI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	MY
Country of Origin:	ID
Logic Type:	CMOS, LSTTL
Moisture Sensitive:	Yes
Pd - Power Dissipation:	1.3 W
Product Type:	Gate Drivers
Propagation Delay - Max:	800 ns
Shutdown:	Shutdown
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Part # Aliases:	6ED3L6F2XT SP000929928 6ED003L06F2XUMA1
Unit Weight:	403 mg

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Datasheet

6ED003L06-F2 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8542399000
USHTS:: 8542310075
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: EAR99

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

6ED Full-Bridge Driver ICs

Infineon Technologies 6ED Full-Bridge Driver ICs control power devices like MOS transistors or IGBTs in 3-phase systems. Based on the SOI technology used, transient voltages are extremely rugged. No parasitic thyristor structures are present in the devices. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

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Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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