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BSC0910NDIATMA1

Name: Infineon BSC0910NDIATMA1
Brand: Infineon Technologies
SKU: 726-BSC0910NDIATMA1
Price: 0.83 USD
Availability: OutOfStock

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Mouser No:

726-BSC0910NDIATMA1

Mfr. No:

BSC0910NDIATMA1

Mfr.:

Infineon Technologies

Datasheet:

ECAD Model:

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Enter Quantity:

Minimum: 5000 Multiples: 5000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 5000)
	$0.838	$4,190.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TISON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	3.5 mOhms, 900 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	6.6 nC, 30.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Brand:	Infineon Technologies
Configuration:	Dual
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	2.4 ns, 4.1 ns
Forward Transconductance - Min:	42 S, 85 S
Product Type:	MOSFETs
Rise Time:	3.6 ns, 5.6 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	13 ns, 28 ns
Typical Turn-On Delay Time:	2.4 ns, 5.6 ns
Part # Aliases:	BSC0910NDI SP000998052
Unit Weight:	101.820 mg