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RoHS

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FF1300UXTR23T2M1BPSA1

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See Product Specifications

Mouser No:

726-FF1300UXTR23T2B1

Mfr. No:

FF1300UXTR23T2M1BPSA1

Mfr.:

Infineon Technologies

Description:

MOSFET Modules CoolSiC MOSFET half-bridge module 2300 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FF1300UXTR23T2M1BPSA1 Datasheet (PDF)

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Learn more about Infineon Technologies FF1300UXTR23T2M1BPSA1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	2.3 kV
Id - Continuous Drain Current:	1.5 kA
Rds On - Drain-Source Resistance:	3.84 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.15 V
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	20 mW
Series:	XHP 2
Packaging:	Tray
Brand:	Infineon Technologies
Configuration:	Dual
Country of Assembly:	DE
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	85 ns
Height:	40 mm
Length:	144 mm
Product:	MOSFET Module
Product Type:	MOSFET Modules
Rise Time:	95 ns
Factory Pack Quantity:	1
Subcategory:	Discrete and Power Modules
Tradename:	CoolSiC
Type:	CoolSiC Trench MOSFET
Typical Turn-Off Delay Time:	380 ns
Typical Turn-On Delay Time:	210 ns
Vf - Forward Voltage:	5 V
Width:	99.8 mm
Part # Aliases:	FF1300UXTR23T2M1 SP006052319

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Datasheet

FF1300UXTR23T2M1BPSA1 Datasheet (PDF)

CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

XHP™ 2 CoolSiC™ MOSFET Half-Bridge Modules

Infineon Technologies XHP™ 2 CoolSiC™ MOSFET Half-Bridge Modules are designed for applications ranging from 1.7kV to 3.3kV, featuring three AC terminals and four DC terminals to maximize current-carrying capabilities. The simple scalability of XHP 2 frame size, owing to the basic modular concept, makes these modules ready for future chip generations and fast-switching devices, enabling low losses. These modules offer low switching losses and high current density, enabled by a low inductive design. Mechanically, the modules provide high power density in a package with a Comparative Tracking Index (CTI) greater than 600, ensuring high creepage and clearance distances. An AlSiC base plate enhances thermal cycling capabilities, making these modules ideal for demanding applications.