FM25V02A-DG

Infineon Technologies
727-FM25V02A-DG
FM25V02A-DG

Mfr.:

Description:
F-RAM NVRAM FRAM Memory Serial

ECAD Model:
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In Stock: 1,205

Stock:
1,205 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$7.30 $7.30
$6.79 $67.90
$6.59 $164.75
$6.33 $316.50
$6.18 $618.00
$6.03 $1,507.50
$5.90 $2,950.00
$5.76 $4,665.60

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$7.08
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
256 kbit
SPI
25 MHz, 40 MHz
32 k x 8
DFN-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V02
Tube
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: US
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 810
Subcategory: Memory & Data Storage
Unit Weight: 37.400 mg
Products found:
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Attributes selected: 0

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan.