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FP50R12N2T7PBPSA1

Name: Infineon FP50R12N2T7PBPSA1
Brand: Infineon Technologies
SKU: 726-FP50R12N2T7PBPSA
Price: 71.55 USD
Availability: InStock

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Mouser No:

726-FP50R12N2T7PBPSA

Mfr. No:

FP50R12N2T7PBPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 50 A PIM IGBT module

Datasheet:

FP50R12N2T7PBPSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies FP50R12N2T7PBPSA1

In Stock: 3

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$71.55	$71.55
	$63.73	$637.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	3-Phase Inverter
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.5 V
Continuous Collector Current at 25 C:	50 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	HU
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Through Hole
Product Type:	IGBT Modules
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FP50R12N2T7P SP005407056

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Datasheet

FP50R12N2T7PBPSA1 Datasheet (PDF)

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CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.