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FS50R12KT3BPSA1

Name: Infineon FS50R12KT3BPSA1
Brand: Infineon Technologies
SKU: 726-FS50R12KT3BPSA1
Price: 75.49 USD
Availability: InStock

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Mouser No:

726-FS50R12KT3BPSA1

Mfr. No:

FS50R12KT3BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 50 A sixpack IGBT module

Datasheet:

FS50R12KT3BPSA1 Datasheet (PDF)

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Learn more about Infineon Technologies FS50R12KT3BPSA1

In Stock: 24

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$75.49	$75.49
	$62.38	$623.80
	$56.19	$5,899.95
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	6-Pack
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Continuous Collector Current at 25 C:	75 A
Gate-Emitter Leakage Current:	400 nA
Pd - Power Dissipation:	280 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Product Type:	IGBT Modules
Series:	FSXR12K3G
Factory Pack Quantity:	15
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FS50R12KT3 SP005422404

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Datasheet

FS50R12KT3BPSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.