IDH16G65C6XKSA1

Infineon Technologies
726-IDH16G65C6XKSA1
IDH16G65C6XKSA1

Mfr.:

Description:
SiC Schottky Diodes SIC DIODES

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about Infineon Technologies IDH16G65C6XKSA1

In Stock: 6,875

Stock:
6,875
Can Dispatch Immediately
On Order:
4,000
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$6.53 $6.53
$4.34 $43.40
$3.51 $351.00
$3.12 $1,560.00
$2.77 $2,770.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
34 A
650 V
1.25 V
82 A
1.6 uA
- 55 C
+ 175 C
XDH16G65
Tube
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Pd - Power Dissipation: 97 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 500
Subcategory: Diodes & Rectifiers
Tradename: CoolSiC
Vr - Reverse Voltage: 650 V
Part # Aliases: IDH16G65C6 SP001620592
Unit Weight: 2 g
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Datasheet

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ 650V Schottky 6th Generation Diodes

Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology, and a novel Schottky metal system. The design of this Infineon series results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC Generation 6 complements the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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