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RoHS

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IMLT65R026M2HXTMA1

Name: Infineon IMLT65R026M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMLT65R026M2HXTM
Price: 11.18 USD
Availability: InStock

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Mouser No:

726-IMLT65R026M2HXTM

Mfr. No:

IMLT65R026M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMLT65R026M2HXTMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IMLT65R026M2HXTMA1

In Stock: 1,048

Stock:: 1,048 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.18	$11.18
	$7.70	$77.00
	$6.12	$612.00
	$5.93	$5,930.00
Full Reel (Order in multiples of 1800)
	$5.71	$10,278.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	82 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	365 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	5.1 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	10.1 ns
Series:	650V G2
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	9.3 ns
Part # Aliases:	IMLT65R026M2H SP005969467

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Datasheet

IMLT65R026M2HXTMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.