IMW120R090M1HXKSA1

Infineon Technologies
726-IMW120R090M1HXKS
IMW120R090M1HXKSA1

Mfr.:

Description:
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

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Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (USD)

Qty. Unit Price
Ext. Price
$7.71 $7.71
$4.47 $44.70
$4.06 $406.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
26 A
117 mOhms
- 7 V, + 23 V
5.7 V
21 nC
- 55 C
+ 150 C
115 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 12.6 ns
Forward Transconductance - Min: 5 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 4 ns
Series: IMW120RXM1H
Factory Pack Quantity: 240
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 11.5 ns
Typical Turn-On Delay Time: 5.2 ns
Part # Aliases: IMW120R090M1H SP001946164
Unit Weight: 6 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Industrial Drives

Infineon Industrial Drives offer a broad portfolio of efficient semiconductors optimized for motor drives. The designer can rely on Infineon intelligent power modules (IPMs) and discretes for smart designs in the low-power range. For medium-power drives, the Infineon EasyPIM™, EasyPACK™, and EconoPIM™ modules are the perfect match. Moving on to the high-power spectrum, EconoDUAL™ and PrimePACK™ are the solutions of choice. These are combined with the innovative .XT interconnection technology. PrimePACK modules can help designers overcome the overrating dilemma by extending the lifetime by raising thermal and power cycling capabilities.

CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

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