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IMZA75R016M2HXKSA1

Name: Infineon IMZA75R016M2HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA75R016M2HXKS
Price: 19.17 USD
Availability: InStock

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Mouser No:

726-IMZA75R016M2HXKS

Mfr. No:

IMZA75R016M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SiC MOSFET, 750 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMZA75R016M2HXKSA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMZA75R016M2HXKSA1

In Stock: 500

Stock:: 500 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$19.17	$19.17
	$14.31	$143.10
	$12.39	$1,239.00
1,200	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	PG-TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	74 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	8 ns
Forward Transconductance - Min:	33 S
Packaging:	Tube
Product:	CoolSiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	11 ns
Series:	CoolSiC G2
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	IMZA75R016M2H SP006113421

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Datasheet

IMZA75R016M2HXKSA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.