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IPB081N06L3 G

Name: Infineon IPB081N06L3 G
Brand: Infineon Technologies
SKU: 726-IPB081N06L3G
Price: 1.94 USD
Availability: InStock

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Mouser No:

726-IPB081N06L3G

Mfr. No:

IPB081N06L3 G

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 60V 50A D2PAK-2 OptiMOS 3

Datasheet:

IPB081N06L3 G Datasheet (PDF)

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In Stock: 512

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.94	$1.94
	$1.24	$12.40
	$0.858	$85.80
	$0.727	$363.50
Full Reel (Order in multiples of 1000)
	$0.607	$607.00
	$0.578	$1,156.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

IPB081N06L3GATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.01

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	6.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	79 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	7 ns
Forward Transconductance - Min:	35 S
Product Type:	MOSFETs
Rise Time:	26 ns
Series:	OptiMOS 3
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	IPB81N6L3GXT SP000398076 IPB081N06L3GATMA1
Unit Weight:	4 g

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Datasheet

IPB081N06L3 G Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Designing Power Systems

Infineon Power MOSFETs are designed to bring more efficiency and power density to designers' products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters, and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply, and power consumption.