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IPD80R1K0CEATMA1

Name: Infineon IPD80R1K0CEATMA1
Brand: Infineon Technologies
SKU: 726-IPD80R1K0CEATMA1
Price: 1.92 USD
Availability: InStock

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Mouser No:

726-IPD80R1K0CEATMA1

Mfr. No:

IPD80R1K0CEATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 800V 5.7A DPAK-2

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPD80R1K0CEATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPD80R1K0CEATMA1

In Stock: 2,101

Stock:: 2,101 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.92	$1.92
	$1.23	$12.30
	$0.58	$58.00
Full Reel (Order in multiples of 2500)
	$0.58	$1,450.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	5.7 A
Rds On - Drain-Source Resistance:	950 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CoolMOS CE
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	25 ns
Part # Aliases:	IPD80R1K0CE SP001130974
Unit Weight:	4 g

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Datasheet

IPD80R1K0CEATMA1 Datasheet (PDF)

Application Notes

EOL

Product Change Notification (PDF)

Models

Other

Packaging:PG-TO252-3-313 | IPD80R1K0CEATMA1 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CoolMOS™ CE Power MOSFETs

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.