IPD80R600P7ATMA1

Infineon Technologies
726-IPD80R600P7ATMA1
IPD80R600P7ATMA1

Mfr.:

Description:
MOSFETs LOW POWER_NEW

Datasheet:
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Learn more about Infineon Technologies IPD80R600P7ATMA1

In Stock: 2,385

Stock:
2,385 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$2.27 $2.27
$1.46 $14.60
$0.984 $98.40
$0.783 $391.50
$0.708 $708.00
Full Reel (Order in multiples of 2500)
$0.636 $1,590.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
8 A
510 mOhms
- 20 V, 20 V
2.5 V
20 nC
- 55 C
+ 150 C
60 W
Enhancement
CoolMOS
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Fall Time: 10 ns
Product Type: MOSFETs
Rise Time: 8 ns
Series: CoolMOS P7
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 8 ns
Part # Aliases: IPD80R600P7 SP001644246
Unit Weight: 360 mg
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

800V CoolMOS™ P7 MOSFETs

Infineon 800V CoolMOS™ P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

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