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IPP100N10S3-05

Name: Infineon IPP100N10S3-05
Brand: Infineon Technologies
SKU: 726-IPP100N10S305
Price: 5.16 USD
Availability: InStock

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See Product Specifications

Mouser No:

726-IPP100N10S305

Mfr. No:

IPP100N10S3-05

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 100A TO220-3 OptiMOS-T

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPP100N10S3-05 Datasheet (PDF)

ECAD Model:

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In Stock: 359

Stock:: 359 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.16	$5.16
	$3.44	$34.40
	$3.31	$1,655.00
	$3.28	$3,280.00
	$3.26	$8,150.00
5,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	4.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	20 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	OptiMOS-T
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	34 ns
Part # Aliases:	SP000407126 IPP1N1S35XK IPP100N10S305AKSA1
Unit Weight:	2 g

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Datasheet

IPP100N10S3-05 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.