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IQE012N03LM5CGATMA1

Name: Infineon IQE012N03LM5CGATMA1
Brand: Infineon Technologies
SKU: 726-IQE012N03LM5CGAT
Price: 2.54 USD
Availability: OutOfStock

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Mouser No:

726-IQE012N03LM5CGAT

Mfr. No:

IQE012N03LM5CGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IQE012N03LM5CGATMA1 Datasheet (PDF)

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Stock:: 0

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.54	$2.54
	$1.62	$16.20
	$1.12	$112.00
	$0.956	$478.00
	$0.847	$847.00
	$0.801	$2,002.50
Full Reel (Order in multiples of 5000)
	$0.76	$3,800.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	224 A
Rds On - Drain-Source Resistance:	1.15 mOhms
Vgs - Gate-Source Voltage:	16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	107 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	Not Available
Fall Time:	3.2 ns
Forward Transconductance - Min:	75 S
Product Type:	MOSFETs
Rise Time:	1.7 ns
Series:	OptiMOS 5
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19.4 ns
Typical Turn-On Delay Time:	4.6 ns
Part # Aliases:	IQE012N03LM5CG SP006150052

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Datasheet

IQE012N03LM5CGATMA1 Datasheet (PDF)

TARIC:: 8541290000
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More