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IRF150DM115XTMA1

Name: Infineon IRF150DM115XTMA1
Brand: Infineon Technologies
SKU: 726-IRF150DM115XTMA1
Price: 4.06 USD
Availability: InStock

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Mouser No:

726-IRF150DM115XTMA1

Mfr. No:

IRF150DM115XTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

IRF150DM115XTMA1 Datasheet (PDF)

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In Stock: 858

Stock:: 858 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.06	$4.06
	$2.66	$26.60
	$1.87	$187.00
	$1.54	$770.00
	$1.42	$1,420.00
	$1.41	$3,525.00
Full Reel (Order in multiples of 4800)
	$1.37	$6,576.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WG-WDSON-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	11.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	33 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	78 W
Channel Mode:	Enhancement
Tradename:	OptiMOS DirectFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MX
Fall Time:	14 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	21 ns
Factory Pack Quantity:	4800
Subcategory:	Transistors
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	11 ns
Part # Aliases:	IRF150DM115 SP001511080

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Datasheet

IRF150DM115XTMA1 Datasheet (PDF)

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

IRF150DM115 OptiMOS™ 5 150V MOSFET

Infineon Technologies IRF150DM115 OptiMOS™ 5 150V MOSFET is designed to optimize thermal design in order to achieve high power density and efficiency. This MOSFET offers a breakthrough reduction in R_DS(on) (up to 25% compared to the alternative in SuperSO8) and Q_rr without compromising FOM_gd and FOM_OSS. This effectively reduces design effort while optimizing system efficiency. The IRF150DM115 MOSFET is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs. This OptiMOS 5 150V MOSFET is suitable for use in targeting power conversion in photovoltaic optimizers, cordless power tools, and motor control. Potential applications include solar micro-inverters, synchronous rectification, and DC-DC converters.