IRS2153DSTRPBF
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See Product Specifications
See Product Specifications
942-IRS2153DSTRPBF
IRS2153DSTRPBF
Mfr.:
Description:
Gate Drivers Self-Osc Half Bridge Drvr 1.1us
Gate Drivers Self-Osc Half Bridge Drvr 1.1us
Datasheet:
In Stock: 2,076
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Stock:
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2,076 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead Time:
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22 Weeks Estimated factory production time for quantities greater than shown.
Pricing (USD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| Cut Tape / MouseReel™ † | ||
| $1.22 | $1.22 | |
| $0.882 | $8.82 | |
| $0.799 | $19.98 | |
| $0.707 | $70.70 | |
| $0.663 | $165.75 | |
| $0.637 | $318.50 | |
| $0.614 | $614.00 | |
| Full Reel (Order in multiples of 2500) | ||
| $0.59 | $1,475.00 | |
| $0.576 | $2,880.00 | |
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.
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Alternative Packaging
Datasheet
Application Notes
- Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality (PDF)
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS2153(1)D and IR2153(1)/IR2153(1)D Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542390090
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
