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RoHS

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S29GL512T11FHB020

Name: Infineon S29GL512T11FHB020
Brand: Infineon Technologies
SKU: 727S29GL512T11FHB020
Price: 10.64 USD
Availability: OutOfStock

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Mouser No:

727S29GL512T11FHB020

Mfr. No:

S29GL512T11FHB020

Mfr.:

Infineon Technologies

Description:

NOR Flash Ser NOR Flash Memory 20

Datasheet:

S29GL512T11FHB020 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Minimum: 1800 Multiples: 1800

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.64	$19,152.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	LAA-64
Series:	S29GL512T
Memory Size:	512 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	60 mA
Organisation:	64 M x 8/32 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Qualification:	AEC-Q100
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	110 ns
Factory Pack Quantity:	1800
Subcategory:	Memory & Data Storage

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Datasheet

S29GL512T11FHB020 Datasheet (PDF)

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USHTS:: 8542320051
TARIC:: 8542326100
ECCN:: 3A991.b.1.a

S29GL01GT/512GT MIRRORBIT™ Eclipse™ Flash Memory

Infineon Technologies S29GL01GT / S29GL512GT MIRRORBIT™ Eclipse™ Flash Memory offers a page access time as fast as 15ns with a corresponding random access time as quick as 100ns. These devices feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This feature results in faster effective programming time than standard programming algorithms. The Infineon Technologies S29GL01GT / S29GL512GT is ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.