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DCG17P1200HR

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Mouser No:

747-DCG17P1200HR

Mfr. No:

DCG17P1200HR

Mfr.:

Littelfuse

Description:

SiC Schottky Diodes Power Diode Disc-Schottky ISOPLUS247

Datasheet:

DCG17P1200HR Datasheet

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Learn more about Littelfuse DCG17P1200HR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Littelfuse
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	ISO247-3
Configuration:	Series
If - Forward Current:	31.7 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	1 kA
Ir - Reverse Current:	35 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	Littelfuse
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV
Unit Weight:	6 g

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Datasheet

DCG17P1200HR Datasheet

PCN

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USHTS:: 8541100080
TARIC:: 854110000
ECCN:: EAR99

Silicon Carbide (SiC) Diodes & Rectifiers

IXYS Silicon Carbide (SiC) Diodes and Rectifiers are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. These SiC diodes and rectifiers come with a 1200V maximum repetitive reverse blocking voltage. They are available in dual-, phase-leg, or common cathode configurations. The I_FAVMTotal for these devices ranges from 12.5A to 60A. IXYS Silicon Carbide (SiC) Diodes and Rectifiers are offered in either SOT-227B or ISOPLUS247 packages. These devices are ideal for use in solar inverters, uninterruptible power supply (UPS), welding equipment, switched-mode power supplies, medical equipment, or as high-speed rectifiers.

Silicon Carbide (SiC) Devices

IXYS Silicon Carbide (SiC) Devices are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. IXYS focuses on developing the most reliable Silicon Carbide Semiconductor Devices available.