CGH55015F2

Name: MACOM CGH55015F2
Brand: MACOM
SKU: 941-CGH55015F2
Price: 141.3 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-CGH55015F2

Mfr. No:

CGH55015F2

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt

Datasheet:

CGH55015F2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM CGH55015F2

In Stock: 81

Stock:: 81

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 100
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$141.30	$141.30
	$110.90	$1,109.00
	$110.89	$11,089.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440166
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	1.5 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	12 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	4.5 GHz
Output Power:	10 W
Packaging:	Tray
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	500 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CGH55015F2 Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854239099
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.