GTVA262711FA-V2-R0

MACOM
941-GTVA262711FAV2R0
GTVA262711FA-V2-R0

Mfr.:

Description:
GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz

ECAD Model:
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In Stock: 17

Stock:
17 Can Dispatch Immediately
Quantities greater than 17 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 50)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$132.03 $132.03
$106.31 $1,063.10
Full Reel (Order in multiples of 50)
$106.31 $5,315.50
$104.26 $10,426.00
500 Quote
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
H-87265J-2
N-Channel
125 V
12 A
+ 225 C
Brand: MACOM
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 18 dB
Maximum Operating Frequency: 2.69 GHz
Minimum Operating Frequency: 2.62 GHz
Output Power: 300 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
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Attributes selected: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.