GANB012-040CBAZ

Nexperia
771-GANB012-040CBAZ
GANB012-040CBAZ

Mfr.:

Description:
GaN FETs GANB012-040CBA/SOT8088/WLCSP12

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2,424

Stock:
2,424
Can Dispatch Immediately
On Order:
2,500
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$0.993 $0.99
$0.646 $6.46
$0.639 $127.80
$0.612 $306.00
$0.59 $590.00
Full Reel (Order in multiples of 2500)
$0.462 $1,155.00
$0.434 $2,170.00

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
SMD/SMT
WLCSP-12
P-Channel
1 Channel
40 V
10 A
12 mOhms
6 V
2.4 V
7.2 nC
- 40 C
+ 125 C
11 W
Enhancement
Brand: Nexperia
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Maximum Drain Gate Voltage: 40 V
Packaging: Reel
Packaging: Cut Tape
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 P-Channel
Part # Aliases: 934667632336
Products found:
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).