PTGH4065S1_T0_00201

Panjit
241-PTGH4065S1T00201
PTGH4065S1_T0_00201

Mfr.:

Description:
IGBTs 650V/40A Insulated Gate Bipolar Transistor

ECAD Model:
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In Stock: 834

Stock:
834 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.00 $4.00
$3.24 $32.40

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.65 V
20 V
76 A
220 W
- 40 C
+ 175 C
Tube
Brand: Panjit
Continuous Collector Current Ic Max: 120 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 6.280 g
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

PTGH High-Speed 650V Field Stop Trench IGBTs

PANJIT PTGH High-Speed 650V Field Stop Trench IGBTs offer superior high-speed switching capabilities with a low saturation voltage of 1.65V at TVJ +25°C. PANJIT PTGH IGBTs are co-packaged with low Qrr and a soft recovery diode. The IGBTs ensure efficient performance with a maximum junction temperature of TVJ +175°C. The devices are designed for reliability under demanding conditions. A positive coefficient VCEsat enables easy paralleling usage. Moreover, the IGBTs are lead-free, comply with EU RoHS 2.0 standards, and utilize a Green molding compound in line with IEC 61249 standards.