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BSM400D12P2G003

Name: ROHM Semiconductor BSM400D12P2G003
Brand: ROHM Semiconductor
SKU: 755-BSM400D12P2G003
Price: 2340.16 USD
Availability: OutOfStock

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Mouser No:

755-BSM400D12P2G003

Mfr. No:

BSM400D12P2G003

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules SIC Pwr Module Half Bridge

Datasheet:

BSM400D12P2G003 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor BSM400D12P2G003

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 4 Multiples: 4

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2,340.16	$9,360.64

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	Module
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	400 A
Vgs - Gate-Source Voltage:	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.45 kW
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	75 ns
Length:	152 mm
Product Type:	MOSFET Modules
Rise Time:	50 ns
Factory Pack Quantity:	4
Subcategory:	Discrete and Power Modules
Type:	SiC Power Module
Typical Turn-Off Delay Time:	240 ns
Typical Turn-On Delay Time:	60 ns
Vr - Reverse Voltage:	1.2 kV
Width:	62 mm

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Datasheet

BSM400D12P2G003 Datasheet (PDF)

Other

PCN

Product Change Notification (PDF)

Specification Sheets

Technical Resources

Whisker assessment of external plating (PDF)

Test/Quality Data

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USHTS:: 8541590080
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.