RF2L42008CG2

STMicroelectronics
511-RF2L42008CG2
RF2L42008CG2

Mfr.:

Description:
RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Complete Your Design

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
52 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 300
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 300)
$33.93 $10,179.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
65 V
1.5 Ohms
3.6 GHz
14.5 dB
8 W
+ 200 C
SMD/SMT
E2-3
Reel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 300
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 6 V to + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
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Attributes selected: 0

Datasheet

EOL

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CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

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