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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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SCT018HU65G3AG

Name: STMicroelectronics SCT018HU65G3AG
Brand: STMicroelectronics
SKU: 511-SCT018HU65G3AG
Price: 19.12 USD
Availability: OutOfStock

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See Product Specifications

Mouser No:

511-SCT018HU65G3AG

Mfr. No:

SCT018HU65G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT018HU65G3AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 22 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$19.12	$19.12
	$15.32	$153.20
	$14.38	$1,438.00
Full Reel (Order in multiples of 600)
	$12.21	$7,326.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HU3PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	-10 V, 22 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	82.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	388 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	9.5 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	40.2 ns
Typical Turn-On Delay Time:	29.5 ns