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RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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SCT025H120G3-7

Name: STMicroelectronics SCT025H120G3-7
Brand: STMicroelectronics
SKU: 511-SCT025H120G3-7
Price: 16.04 USD
Availability: OutOfStock

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Mouser No:

511-SCT025H120G3-7

Mfr. No:

SCT025H120G3-7

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT025H120G3-7 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics SCT025H120G3-7

Availability

Stock:: 0

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On Order:: 100
Factory Lead Time:: 21

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$16.04	$16.04
	$12.41	$124.10
	$10.74	$1,074.00
	$10.73	$5,365.00
Full Reel (Order in multiples of 1000)
	$9.49	$9,490.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	H2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	37 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Fall Time:	25 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	27 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	23 ns

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Datasheet

SCT025H120G3-7 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.