SCT070H120G3AG

STMicroelectronics
511-SCT070H120G3AG
SCT070H120G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics SCT070H120G3AG

In Stock: 85

Stock:
85 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$11.63 $11.63
$8.14 $81.40
$7.00 $700.00
Full Reel (Order in multiples of 1000)
$6.54 $6,540.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
30 A
87 mOhms
- 18 V, + 18 V
4.2 V
37 nC
- 55 C
+ 175 C
223 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: IT
Fall Time: 9.9 ns
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 26.6 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 17.6 ns
Typical Turn-On Delay Time: 18.7 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.