SGT140R70ILB

STMicroelectronics
511-SGT140R70ILB
SGT140R70ILB

Mfr.:

Description:
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$4.63 $4.63
$3.24 $32.40
$2.50 $250.00
$2.22 $1,110.00
$2.09 $2,090.00
Full Reel (Order in multiples of 3000)
$1.94 $5,820.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PowerFLAT-8
700 V
17 A
140 mOhms
- 6 V, + 7 V
2.5 V
3.5 nC
- 55 C
+ 150 C
113 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 4 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FET
Product Type: GaN FETs
Rise Time: 5 ns
Series: SGT
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
Typical Turn-Off Delay Time: 3 ns
Typical Turn-On Delay Time: 4 ns
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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