STB13N60M2

STMicroelectronics
511-STB13N60M2
STB13N60M2

Mfr.:

Description:
MOSFETs N-CH 600V 0.35Ohm 11A Mdmesh M2
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Datasheet:
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In Stock: 1,784

Stock:
1,784
Can Dispatch Immediately
On Order:
2,000
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
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Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$2.73 $2.73
$1.77 $17.70
$1.22 $122.00
$1.00 $500.00
Full Reel (Order in multiples of 1000)
$0.932 $932.00
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Reel
Cut Tape
MouseReel
STB13N60M2
- 55 C
+ 150 C
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Fall Time: 9.5 ns
Id - Continuous Drain Current: 11 A
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: D2PAK-3 (TO-263-3)
Pd - Power Dissipation: 110 W
Product Type: MOSFETs
Qg - Gate Charge: 17 nC
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 10 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Tradename: MDmesh
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 11 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: - 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Unit Weight: 4 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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