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STGB20H65DFB2

Name: STMicroelectronics STGB20H65DFB2
Brand: STMicroelectronics
SKU: 511-STGB20H65DFB2
Price: 0.86 USD
Availability: Discontinued

Mouser No:

511-STGB20H65DFB2

Mfr. No:

STGB20H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STGB20H65DFB2 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STGB20H65DFB2

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1000 Multiples: 1000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	$0.868	$868.00
	$0.867	$8,670.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Packaging:	Reel
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1.380 g

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Filter Document:

Datasheet

STGB20H65DFB2 Datasheet (PDF)

PCN

Product Change Notification 2024-03-05 (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.