STGP4M65DF2

STMicroelectronics
511-STGP4M65DF2
STGP4M65DF2

Mfr.:

Description:
IGBTs Trench Gate IGBT M Series 650V 4A
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Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$1.42 $1.42
$0.681 $6.81
$0.607 $60.70
$0.476 $238.00
$0.433 $433.00
$0.398 $796.00
$0.389 $1,945.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGP4M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1.800 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

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