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In Stock

RoHS

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STGP6M65DF2

Name: STMicroelectronics STGP6M65DF2
Brand: STMicroelectronics
SKU: 511-STGP6M65DF2
Price: 1.71 USD
Availability: OutOfStock

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Mouser No:

511-STGP6M65DF2

Mfr. No:

STGP6M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss

Complete Your Design

Datasheet:

STGP6M65DF2 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGP6M65DF2

Availability

Stock:: Non-Stocked

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On Order:: 2,000
Factory Lead Time:: 15

Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.71	$1.71
	$0.819	$8.19
	$0.732	$73.20
	$0.578	$289.00
	$0.529	$529.00
	$0.493	$986.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	12 A
Pd - Power Dissipation:	88 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGP6M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	12 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1.800 g

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Datasheet

STGP6M65DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.