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RoHS

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STGWA100H65DFB2

Name: STMicroelectronics STGWA100H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA100H65DFB2
Price: 6.58 USD
Availability: InStock

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Mouser No:

511-STGWA100H65DFB2

Mfr. No:

STGWA100H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon

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Datasheet:

STGWA100H65DFB2 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGWA100H65DFB2

In Stock: 998

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$6.58	$6.58
	$3.78	$37.80
	$3.16	$316.00
	$3.07	$3,684.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	145 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6.100 g

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Datasheet

STGWA100H65DFB2 Datasheet (PDF)

PCN

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STGWA100H65DFB2 HB2 IGBT

STMicroelectronics STGWA100H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA100H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.55V (typical) at an I_C of 100A.