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RoHS

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STGWA30IH65DF

Name: STMicroelectronics STGWA30IH65DF
Brand: STMicroelectronics
SKU: 511-STGWA30IH65DF
Price: 1.17 USD
Availability: OutOfStock

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Mouser No:

511-STGWA30IH65DF

Mfr. No:

STGWA30IH65DF

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo

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Datasheet:

STGWA30IH65DF Datasheet (PDF)

ECAD Model:

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.17	$702.00
	$1.14	$1,368.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	180 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	30 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6.100 g

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Datasheet

STGWA30IH65DF Datasheet (PDF)

Application Notes

PCN

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.