+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (UK) +44 (0) 1494-427500 Feedback

Change Location

English

Incoterms:DDU
Duty, customs fees and taxes are collected at time of delivery.

Please confirm your currency selection:

US Dollars
Free shipping on most orders over $150 (USD).
All major credit cards accepted

Euros
Free shipping on most orders over 150 € (EUR).
All major credit cards accepted

South African Rand
Free shipping on most orders over R2 000 (ZAR).
American Express not accepted as a method of payment

British Pounds
Free shipping on most orders over £125 (GBP).
All major credit cards accepted

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGWA40H65DFB2

Name: STMicroelectronics STGWA40H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA40H65DFB2
Price: 3.72 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGWA40H65DFB2

Mfr. No:

STGWA40H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long

Complete Your Design

Datasheet:

STGWA40H65DFB2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGWA40H65DFB2

In Stock: 550

Stock:: 550 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.72	$3.72
	$2.04	$20.40
	$1.43	$143.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	72 A
Pd - Power Dissipation:	230 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6.100 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGWA40H65DFB2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.