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RoHS

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STGYA50H120DF2

Name: STMicroelectronics STGYA50H120DF2
Brand: STMicroelectronics
SKU: 511-STGYA50H120DF2
Price: 6.07 USD
Availability: InStock

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Mouser No:

511-STGYA50H120DF2

Mfr. No:

STGYA50H120DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT

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Datasheet:

STGYA50H120DF2 Datasheet (PDF)

ECAD Model:

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In Stock: 490

Stock:: 490

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On Order:: 600
Factory Lead Time:: 14

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$6.07	$6.07
	$4.26	$42.60
	$3.64	$436.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	535 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	4.430 g

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Datasheet

STGYA50H120DF2 Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.